Institute of Nano-Tech and Nano-Bionics - China
Author Profile
Scopus
🎓 Early Academic Pursuits
Prof. Dr. Masao Ikeda began his academic journey at Waseda University, Tokyo, Japan, where he earned his B.S. and M.S. degrees in Chemistry in 1978 and 1980, respectively. He later completed his Dr.Eng. degree in Electronics Engineering from the same university in 1991. His early academic pursuits were characterized by a strong foundation in both chemistry and electronics, setting the stage for his future research in advanced material systems and semiconductor technologies.
💼 Professional Endeavors
In 1980, Prof. Ikeda joined the Sony Corporation Research Center in Yokohama, Japan. His professional career flourished at Sony, where he eventually became the R&D Director of the Advanced Material Laboratories in Kanagawa. His work focused on the development of compound semiconductor alloys, particularly in short-wavelength semiconductor lasers. His pioneering research led to the development of AlGaAs, AlGaInP, ZnMgSSe, and AlGaInN material systems, with a notable achievement being the first continuous-wave operation of red-emitting AlGaInP lasers at room temperature.
🔬 Contributions and Research Focus
Prof. Ikeda's primary research focus has been on compound semiconductor alloys for laser applications. His groundbreaking work in this area resulted in the commercialization of three generations of semiconductor lasers: AlGaAs, AlGaInP, and AlGaInN, specifically for optical disk technology. His innovations in these compound semiconductor alloys revolutionized the development of short-wavelength lasers, greatly enhancing data storage capabilities in consumer electronics.
🌍 Impact and Influence
Prof. Ikeda's research has had a profound impact on both the academic and industrial sectors. His work on semiconductor lasers directly contributed to the advancement of optical storage technology, a critical component in the global electronics industry. The successful commercialization of AlGaInP and AlGaInN lasers has cemented his reputation as a leader in compound semiconductor alloys research. His move to the Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences in 2013, marked a continuation of his influential work, where he has focused on Nitride-based materials and devices.
🏆Academic Cites
Prof. Ikeda's research has garnered significant attention in the scientific community. His work has been widely cited, particularly his contributions to the development of AlGaInP and AlGaInN semiconductor lasers. These citations reflect the importance of his work in advancing the field of semiconductor materials and their applications in optical technology. His findings remain a cornerstone for researchers exploring the capabilities of compound semiconductor alloys in various technological applications.
🌟 Legacy and Future Contributions
Prof. Masao Ikeda's legacy is firmly rooted in his contributions to the development of semiconductor lasers and the commercialization of innovative materials for optical disks. His future contributions are expected to further advance the field of Nitride-based materials and devices, as he continues his research at the Suzhou Institute. Prof. Ikeda’s commitment to developing next-generation technologies will leave a lasting impact on both the academic and industrial sectors, ensuring his influence endures for years to come.
📝Compound Semiconductor Alloys
Throughout his career, Prof. Ikeda has made pioneering advancements in the study and application of compound semiconductor alloys. His work in developing AlGaInP lasers, based on these alloys, has transformed optical storage systems. Prof. Ikeda's research continues to explore the potential of compound semiconductor alloys in creating more efficient and powerful semiconductor devices for future technological breakthroughs.
Notable Publication
📝Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing
Authors: Huang, S., Ikeda, M., Zhang, F., Zhang, S., Liu, J.
Journal: Journal of Semiconductors
Year: 2024
Citations: 0
📝 Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering
Authors: Dai, Y., Liu, J., Sun, X., Ikeda, M., Yang, H.
Journal: Applied Physics Letters
Year: 2024
Citations: 0
📝480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region
Authors: Dai, Y., Liu, J., Sun, X., Ikeda, M., Yang, H.
Journal: Optics Express
Year: 2024
Citations: 0
📝Effects of Miscut on Step Instabilities in Homo-Epitaxially Grown GaN
Authors: Wu, P., Liu, J., Li, F., Ikeda, M., Yang, H.
Journal: Nanomaterials
Year: 2024
Citations: 0
📝Controllable step-flow growth of GaN on patterned freestanding substrate
Authors: Wu, P., Liu, J., Hu, L., Ikeda, M., Yang, H.
Journal: Journal of Semiconductors
Year: 2024
Citations: 0
📝Suitable contacting scheme for evaluating electrical properties of GaN-based p-type layers
Authors: Huang, S., Ikeda, M., Zhang, M., Zhu, J., Liu, J.
Journal: Journal of Semiconductors
Year: 2023
Citations: 2