Mr. Modassir Anwer, Indian Institute of Technology Kanpur , India
Mr. Modassir Anwer is currently a Ph.D. scholar in Microelectronics and VLSI at the Indian Institute of Technology Kanpur, India. His research focuses on the growth, doping, and device fabrication of Ga₂O₃ and In₂O₃ using LPCVD, including simulations and thermal analysis of AlN/InGa₂O₃ HEMTs. He previously worked as a Research Assistant at IIT Kanpur and holds an M.Tech. in Nano Science & Technology from Jadavpur University and a B.Tech. in Electronics & Communication Engineering from St. Thomas College of Engineering & Technology, Kolkata. He has also served as a tutor and teaching assistant for multiple undergraduate and postgraduate electronics courses at IIT Kanpur.
Author Profile
Scopus | Orcid
Education
Mr. Modassir Anwer has cultivated a strong academic foundation in the field of microelectronics and nanotechnology, beginning with a Bachelor of Technology in Electronics and Communication Engineering from St. Thomas College of Engineering & Technology, Kolkata, where he graduated in 2015 with a commendable CGPA of 8.19 out of 10. He further advanced his expertise by pursuing a Master of Technology in Nano Science and Technology from Jadavpur University, Kolkata, completing the program in 2017 with a CGPA of 7.44. Driven by a deep interest in semiconductor technology and device fabrication, he is currently pursuing a Ph.D. in Microelectronics and VLSI at the prestigious Indian Institute of Technology (IIT) Kanpur. He began his doctoral studies in December 2019 and has maintained a strong academic performance with a CGPA of 7.61 out of 10.
Research Experience and Contributions
During his Ph.D. at IIT Kanpur, Mr. Anwer has been actively engaged in cutting-edge research focused on the growth, doping, and device fabrication of wide-bandgap semiconductors, specifically Ga₂O₃ and In₂O₃, utilizing Low-Pressure Chemical Vapor Deposition (LPCVD) techniques. His work has contributed to the advancement of high-power and high-frequency electronic devices. A notable part of his research involves the simulation of AlN/InGa₂O₃ High Electron Mobility Transistors (HEMTs), where he explores their electrical and thermal behavior using advanced tools such as COMSOL Multiphysics. Additionally, his work on silicon doping in Ga₂O₃ aims to fine-tune the electrical properties of these materials for device applications. His research has substantial implications in the development of next-generation electronics and power devices, particularly in harsh or high-temperature environments.
Teaching Experience
Mr. Anwer has demonstrated a strong commitment to academic mentorship through his roles as a tutor and teaching assistant at IIT Kanpur. He served as a tutor for five semesters, where he was responsible for designing experiments and managing the laboratory for the undergraduate course "Introduction to Electronics (ESC 201)." His responsibilities extended beyond technical instruction, encompassing classroom engagement and practical laboratory supervision. Additionally, he has served as a teaching assistant across four semesters for several core subjects, including "Introduction to Electronics," "Solid State Devices I," "Integrated Circuit Fabrication Technology," and "Microelectronics - II." Through these roles, he has contributed significantly to the academic growth of undergraduate and postgraduate students alike.
Research Focus
Mr. Anwer’s research is at the intersection of materials science, semiconductor device engineering, and simulation. His current focus on Ga₂O₃ and In₂O₃ semiconductors places him at the forefront of emerging materials research. These materials are regarded as potential successors to conventional silicon-based devices due to their superior breakdown voltage, higher thermal stability, and suitability for power electronics. By exploring doping mechanisms, device architecture, and thermal performance, Mr. Anwer aims to contribute to the development of more efficient and compact semiconductor devices suitable for modern-day applications such as renewable energy systems, electric vehicles, and radio-frequency electronics.
Awards and Recognition
While specific awards have not been detailed, Mr. Modassir Anwer’s academic trajectory and his association with elite institutions such as IIT Kanpur and Jadavpur University highlight his merit and potential in the field of microelectronics. His continued involvement in high-impact research and teaching underlines a profile marked by academic rigor, technical proficiency, and a passion for advancing semiconductor technology.
Notable Publication
📘LPCVD grown n-type doped β-Ga₂O₃ films on c-plane sapphire using TEOS precursor - Materials Science in Semiconductor Processing(2025)