Muhammad Khan – Semiconductor – Best Scholar Award 

Posted on by AMO Physics

Mr. Muhammad Khan's academic journey began with a strong foundation in physics, completing his B.Sc. in Mathematics and Physics at the University of the Punjab, Lahore, Pakistan. He further advanced his studies by obtaining an MSc in Physics from the same institution, followed by an MS in Physics from International Islamic University, Islamabad, Pakistan, where he focused on the optical properties of nitrogen-implanted GaAs. His academic excellence and passion for research led him to pursue a PhD in Condensed Matter Physics at Peking University, Beijing, China, under the supervision of Prof. Xiaodong Hu. His doctoral research revolved around dislocations reduction and phase modulation in MOCVD heteroepitaxial growth of GaN, laying the groundwork for his expertise in semiconductor materials and device applications.

💼 Professional Endeavors

With a distinguished academic background, Mr. Muhammad Khan embarked on a diverse professional journey, holding positions in both academia and research. His career includes roles as a Research Scientist at the National Center for Physics, Quaid-i-Azam University, Islamabad, where he focused on the optical properties of ion-implanted boron nitride thin films. He also served as a Postdoctoral Research Associate and Lecturer in the Department of Physics at the University of Azad Jammu and Kashmir, Pakistan, where he conducted groundbreaking research on hexagonal boron nitride nanostructures and taught advanced quantum mechanics. His earlier professional experiences as a Senior Science Teacher at Fazaia Inter College Nur Khan, Rawalpindi, and Science Teacher at various institutions reflect his commitment to education and scientific dissemination.

🔬 Contributions and Research Focus

Mr. Khan's research is centered on the growth and characterization of III-V semiconductors, particularly gallium nitride (GaN) and its applications in light-emitting diodes (LEDs) and ultraviolet photodetectors (PDs). His expertise spans multiple advanced techniques, including metal-organic chemical vapor deposition (MOCVD) and chemical vapor deposition (CVD) for semiconductor growth. Additionally, he has extensively worked with various characterization tools such as scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy, and X-ray diffraction (XRD). His work also involves simulation of III-nitride devices using Crosslight and APSYS simulation tools, contributing to advancements in semiconductor device fabrication.

🌍 Impact and Influence

Mr. Khan’s impact on the semiconductor industry is evident through his active participation in high-impact research projects and collaborations with esteemed scientists. With over 100 citations and an h-index of 6, his research has been recognized internationally. He has contributed significantly to projects funded by prestigious organizations such as the Higher Education Commission (HEC) of Pakistan and the Beijing Municipal Science & Technology Commission, focusing on enhancing GaN growth, reducing dislocation densities, and improving material properties for device applications. His work has practical implications in biomedical and nuclear applications, broadening the scope of semiconductor research.

🏆Academic Cites

Mr. Khan’s research publications in reputable journals have received significant citations, demonstrating the scientific community's recognition of his work. His contributions to gallium nitride growth, ion implantation, and device fabrication serve as valuable references for researchers in the field. His role as a key participant and doctoral researcher in multiple Beijing Municipal Science & Technology Commission projects further underscores the relevance and impact of his work.

🌟 Legacy and Future Contributions

With a career objective to become a world-leading expert in semiconductor growth and device fabrication, Mr. Muhammad Khan’s future contributions are expected to push the boundaries of III-V semiconductor research. His ongoing research on hexagonal boron nitride nanostructures and their applications in biomedical and nuclear fields indicates his forward-thinking approach. By continuing his work in semiconductor materials, his legacy will be defined by innovations that shape the next generation of electronic and optoelectronic devices.

📝Semiconductor

Mr. Muhammad Khan’s expertise in semiconductor research has led to significant advancements in gallium nitride growth and device applications. His work on semiconductor characterization techniques has contributed to improving material properties for LEDs and photodetectors. Future developments in semiconductor technology will be greatly influenced by his pioneering research in III-V compounds and heteroepitaxial growth.

Notable Publication

📝Wafer-Scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

Authors: Lei, M.; Chen, H.; Khan, M.S.A.; Zong, H.; Hu, X.

Journal: Applied Surface Science Advances

Year: 2023

Access: Open Access

Jaya Madan | Semiconductor Devices | Best Researcher Award  

Posted on by AMO Physics

Dr. Jaya Madan | Semiconductor Devices | Best Researcher Award  

Chitkara University | India 

AUTHOR PROFILE

EARLY ACADEMIC PURSUITS

Jaya Madan's academic journey began with stellar performance in her secondary and senior secondary education, topping her school in Class X and scoring an impressive 83.66% in PCM during her senior secondary at Rajkiya Pratibha Vikas Vidyalaya, Rohini, Delhi. She pursued her undergraduate degree in B.Sc. (H) Electronics at Keshav Mahavidyalaya, University of Delhi, graduating with an outstanding 81.73%. Her academic excellence continued in her postgraduate studies in Electronics at the University of Delhi, South Campus, where she secured 82.71%.

PROFESSIONAL ENDEAVORS

Dr. Jaya Madan's professional journey is marked by her contributions as a researcher and educator. She served as a Junior Research Fellow (JRF) and Senior Research Fellow (SRF) under the UGC-JRF Fellowship scheme at Delhi Technological University (DTU) from 2013 to 2017. She then transitioned into academia as an Assistant Professor at ABES Institute of Technology, Ghaziabad, and later at Chitkara University, Punjab, where she continues to impart knowledge and guide research.

CONTRIBUTIONS AND RESEARCH FOCUS

Dr. Madan's research is primarily focused on Semiconductor Devices, particularly nanoscale FETs and solar cells. Her Ph.D. dissertation titled "Simulation and Analysis of Gate All Around Tunnel FET for High Performance Analog and RF Applications" is a testament to her expertise. She has published extensively, with 10 journal papers and numerous conference presentations. Her work on Tunnel FETs and solar cells has significant implications for the development of advanced semiconductor devices.

IMPACT AND INFLUENCE

Dr. Madan's contributions have been widely recognized, earning her a place in the Stanford University list of the World's Top 2% scientists for two consecutive years, 2022 and 2023. She has received multiple awards for excellence in research, including the Excellence in Research Publications Award and the Research Publication Incentive Award from Chitkara University. Her research has been funded by prestigious institutions, and she has been granted several patents, further underscoring her impact in the field of Semiconductor Devices.

ACADEMIC CITES AND LEGACY

Throughout her career, Dr. Madan has guided numerous students, with four Ph.D. candidates having defended their theses under her supervision. Her guidance extends to M.E. thesis projects, demonstrating her commitment to fostering the next generation of researchers in the field of Semiconductor Devices. Her publications and patents contribute to a robust body of knowledge that will influence future research and innovation.

FUTURE CONTRIBUTIONS

Looking ahead, Dr. Madan is poised to continue her pioneering work in Semiconductor Devices, focusing on the development of high-efficiency solar cells and advanced FETs. Her ongoing research guidance and innovative patents suggest a future rich with breakthroughs that will advance the capabilities and applications of semiconductor technology.

SEMICONDUCTOR DEVICES RESEARCH

Dr. Madan's research on Semiconductor Devices encompasses a wide range of topics, including nanoscale FETs like MOSFETs, Tunnel FETs, FinFETs, and Gate-All-Around FETs, as well as advanced solar cells such as tandem solar cells and thin film solar cells. Her work with TCAD simulations and analytical modeling is pivotal in developing new semiconductor technologies that enhance performance and efficiency.

In conclusion, Dr. Jaya Madan's illustrious career, marked by her extensive research, numerous awards, and impactful patents, solidifies her legacy in the field of Semiconductor Devices. Her contributions continue to influence both academia and industry, driving innovation and shaping the future of semiconductor technology.

NOTABLE PUBLICATION