Minghu Fang | Quantum Materials | Best Research Article Award 

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Prof. Minghu Fang | Quantum Materials | Best Research Article Award 

Prof. Minghu Fang | School of Physics, Zhejiang University |  China

Prof. Minghu Fang is a Professor of Physics at Zhejiang University, specializing in strongly correlated electron systems, quantum phase transitions, unconventional superconductors, magnetic materials, and topological materials. His group has made landmark discoveries of three superconducting systems Fe(Te,Se), (Tl,K,Rb)FeₓSe₂, and TlNi₂(Se,S)₂ drawing worldwide attention in the superconductivity field. With over 180 publications and more than 6,000 citations, he has significantly advanced the understanding of non-Fermi liquid behavior and magnetotransport phenomena. His achievements have been recognized with major science prizes from the Zhejiang and Beijing governments in 2021.

Author Profile

Scopus

Early Academic Pursuits

Prof. Minghu Fang laid the foundation of his distinguished academic career through rigorous training in physics. He earned his B.S. in Physics from Anhui University (1980–1984) and further specialized in Low Temperature Physics at the University of Science and Technology of China, where he completed his Master’s degree (1986–1989). His academic excellence continued at Zhejiang University, where he obtained his Ph.D. in Condensed Physics in 1992. This strong academic background set the stage for his pioneering work in Quantum Materials and strongly correlated electron systems.

Professional Endeavors

After completing his doctoral studies, Prof. Fang joined Zhejiang University, progressing rapidly from Assistant Professor (1992–1993) to Associate Professor (1993–1996) and eventually to Professor of Physics (1996–present). His academic journey includes multiple international appointments, such as postdoctoral fellowships at Kyoto University (1998–2000, JSPS Fellow) and Tulane University, USA (2007–2008). He has also served as a Visiting Professor and Distinguished Visiting Professor at Kyoto University on multiple occasions. These professional endeavors enriched his global perspective and reinforced his standing in the Quantum Materials research community.

Contributions and Research Focus

Prof. Minghu Fang’s research focus centers on Quantum Materials, including strongly correlated electron systems, quantum phase transitions, non-Fermi liquid behavior, magnetic materials, Fe-based superconductors, Cu-oxide superconductors, and topological materials. His group has made groundbreaking contributions, particularly in the discovery of three superconducting systems: Fe(Te,Se), (Tl,K,Rb)FexSe2, and TlNi2(Se,S)2. These discoveries have had a lasting influence in the global superconductivity community. His prolific output includes more than 180 publications, with a citation count exceeding 6150 times, reflecting the broad impact of his scientific contributions.

Impact and Influence

Prof. Fang’s discoveries and insights into Quantum Materials have placed him at the forefront of international condensed matter physics. His recognition includes two prestigious Science Prizes (2021) awarded by the Zhejiang Province Government and the Beijing Government for his pioneering work in superconductivity and magnetic structures. These awards underscore his influence in shaping modern perspectives on high-temperature superconductors and related Quantum Materials.

Academic Cites

The academic community has acknowledged Prof. Fang’s research extensively, with over 6150 citations across leading journals such as Physical Review B, Physical Review Research, Advanced Functional Materials, Applied Physics Reviews, and Communications Materials. His representative publications on topics like universal scaling behaviors, magnetoresistance, nodal-net semimetals, and plasmonic effects continue to inspire researchers worldwide and advance the study of Quantum Materials.

Legacy and Future Contributions

Prof. Minghu Fang’s legacy lies in his pioneering discoveries in superconductivity and correlated electron physics. Moving forward, his research will continue to explore novel superconducting and topological systems, pushing the boundaries of Quantum Materials. By mentoring students, collaborating internationally, and leading innovative projects, he ensures that his influence extends to future generations of physicists. His future contributions are expected to further unravel the mysteries of superconductivity, magnetic phenomena, and quantum electronic phases.

Notable Publications

Scaling behavior of magnetoresistance and Hall resistivity in the altermagnet CrSb

Journal: Physical Review B

Year: 2025

Citations: 1

Plasmonic Photovoltaic Effect of an Original 2D Electron Gas System and Application in Mid-Infrared Imaging

Journal: Advanced Functional Materials

Year: 2024

Citations: 3

Negative magnetoresistance in the antiferromagnetic semimetal V₁/₃TaS₂

Journal: Chinese Physics B

Year: 2024

Citations: 1

Bulk superconductivity in transition metal oxide TaO

Journal: Physica C: Superconductivity and Its Applications

Year: 2023

Citations: 4

Superconductivity in TlBi₂ with a large Kadowaki-Woods ratio

Journal: Physical Review B

Year: 2022

Citations: 7

Large positive and negative magnetoresistance in the magnetic EuCu₄As₂ crystal

Journal: Journal of Alloys and Compounds

Year: 2022

Citations: 5

Conclusion

Prof. Minghu Fang’s career is a testament to academic excellence, international collaboration, and groundbreaking contributions to Quantum Materials research. From his early academic pursuits to his present role as a global leader in superconductivity and condensed matter physics, his work has left a profound mark on science. With a legacy defined by over 180 influential papers, multiple high-level awards, and the discovery of new superconducting systems, Prof. Fang continues to shape the direction of Quantum Materials research and will remain a central figure in advancing physics worldwide.

Modassir Anwer – Solid-State Physics – Best Researcher Award 

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Mr. Modassir Anwer - Solid-State Physics  - Best Researcher Award 

Mr. Modassir Anwer, Indian Institute of Technology Kanpur , India 

Mr. Modassir Anwer is currently a Ph.D. scholar in Microelectronics and VLSI at the Indian Institute of Technology Kanpur, India. His research focuses on the growth, doping, and device fabrication of Ga₂O₃ and In₂O₃ using LPCVD, including simulations and thermal analysis of AlN/InGa₂O₃ HEMTs. He previously worked as a Research Assistant at IIT Kanpur and holds an M.Tech. in Nano Science & Technology from Jadavpur University and a B.Tech. in Electronics & Communication Engineering from St. Thomas College of Engineering & Technology, Kolkata. He has also served as a tutor and teaching assistant for multiple undergraduate and postgraduate electronics courses at IIT Kanpur.

Author Profile

Scopus | Orcid

Education

Mr. Modassir Anwer has cultivated a strong academic foundation in the field of microelectronics and nanotechnology, beginning with a Bachelor of Technology in Electronics and Communication Engineering from St. Thomas College of Engineering & Technology, Kolkata, where he graduated in 2015 with a commendable CGPA of 8.19 out of 10. He further advanced his expertise by pursuing a Master of Technology in Nano Science and Technology from Jadavpur University, Kolkata, completing the program in 2017 with a CGPA of 7.44. Driven by a deep interest in semiconductor technology and device fabrication, he is currently pursuing a Ph.D. in Microelectronics and VLSI at the prestigious Indian Institute of Technology (IIT) Kanpur. He began his doctoral studies in December 2019 and has maintained a strong academic performance with a CGPA of 7.61 out of 10.

Research Experience and Contributions

During his Ph.D. at IIT Kanpur, Mr. Anwer has been actively engaged in cutting-edge research focused on the growth, doping, and device fabrication of wide-bandgap semiconductors, specifically Ga₂O₃ and In₂O₃, utilizing Low-Pressure Chemical Vapor Deposition (LPCVD) techniques. His work has contributed to the advancement of high-power and high-frequency electronic devices. A notable part of his research involves the simulation of AlN/InGa₂O₃ High Electron Mobility Transistors (HEMTs), where he explores their electrical and thermal behavior using advanced tools such as COMSOL Multiphysics. Additionally, his work on silicon doping in Ga₂O₃ aims to fine-tune the electrical properties of these materials for device applications. His research has substantial implications in the development of next-generation electronics and power devices, particularly in harsh or high-temperature environments.

Teaching Experience

Mr. Anwer has demonstrated a strong commitment to academic mentorship through his roles as a tutor and teaching assistant at IIT Kanpur. He served as a tutor for five semesters, where he was responsible for designing experiments and managing the laboratory for the undergraduate course "Introduction to Electronics (ESC 201)." His responsibilities extended beyond technical instruction, encompassing classroom engagement and practical laboratory supervision. Additionally, he has served as a teaching assistant across four semesters for several core subjects, including "Introduction to Electronics," "Solid State Devices I," "Integrated Circuit Fabrication Technology," and "Microelectronics - II." Through these roles, he has contributed significantly to the academic growth of undergraduate and postgraduate students alike.

Research Focus

Mr. Anwer’s research is at the intersection of materials science, semiconductor device engineering, and simulation. His current focus on Ga₂O₃ and In₂O₃ semiconductors places him at the forefront of emerging materials research. These materials are regarded as potential successors to conventional silicon-based devices due to their superior breakdown voltage, higher thermal stability, and suitability for power electronics. By exploring doping mechanisms, device architecture, and thermal performance, Mr. Anwer aims to contribute to the development of more efficient and compact semiconductor devices suitable for modern-day applications such as renewable energy systems, electric vehicles, and radio-frequency electronics.

Awards and Recognition

While specific awards have not been detailed, Mr. Modassir Anwer’s academic trajectory and his association with elite institutions such as IIT Kanpur and Jadavpur University highlight his merit and potential in the field of microelectronics. His continued involvement in high-impact research and teaching underlines a profile marked by academic rigor, technical proficiency, and a passion for advancing semiconductor technology.

 Notable Publication

📘LPCVD grown n-type doped β-Ga₂O₃ films on c-plane sapphire using TEOS precursor - Materials Science in Semiconductor Processing(2025)

Samreen Rashid – Quantum Materials – Best Researcher Award 

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Ms. Samreen Rashid - Quantum Materials - Best Researcher Award 

Sungkyunkwan University - Natural Sciences Campus - South Korea 

Author Profile

Scopus

Orcid

🎓 Early Academic Pursuits

Ms. Samreen Rashid’s academic journey as a physicist began with a strong foundation in the field of science, where she developed a passion for critical thinking and problem solving. Her academic path was further enriched by her deep interest in quantum materials, which laid the groundwork for her future research endeavors. As a dedicated student, Ms. Rashid excelled in grasping complex theoretical and experimental concepts, which set the stage for her remarkable contributions to the study of quantum materials.

💼 Professional Endeavors

Ms. Samreen Rashid’s professional career is distinguished by her expertise in quantum materials, particularly in the synthesis and characterization of single crystals. She worked as a Research Assistant at Sungkyunkwan University (2018–2021), where she contributed significantly to experimental projects on quantum materials. Her role included providing guidance to undergraduate students and assisting professors with course work. She also served as a Lecturer at the University of Sargodha, Pakistan, teaching graduate-level courses, and as a Lab Scientist at NUST, Islamabad, where she conducted classical and modern physics experiments. Through her experience in academia, Ms. Rashid has developed a comprehensive skill set in project management, research, and innovation, positioning her as a leading physicist in quantum materials.

🔬 Contributions and Research Focus

Ms. Rashid’s research contributions focus on the synthesis and characterization of quantum materials, particularly the growth of single crystals like Al13Cr2, a binary quasicrystal. Her Ph.D. thesis investigates the Al-based binary quasicrystal (Al13Cr2) and its physical properties, with an emphasis on magnetic, transport, and thermal behaviors. Her work explores the coexistence of superconductivity and ferromagnetism at low temperatures, as well as the magnetic characteristics of aluminum-based quasicrystals. Ms. Rashid’s research also aims to develop phase diagrams that consider quantum criticality points (QCP), significantly advancing the field of quantum materials.

🌍 Impact and Influence

Ms. Rashid’s impact in the field of quantum materials is evident through her research on the physical properties of Al13Cr2 and other complex systems. Her work on single crystal growth and the study of quasicrystals has contributed to a better understanding of the behaviors and characteristics of quantum materials. Through her research publications and poster presentations, such as "Spectroscopic evidence for the Isotropic Superconducting Gap in LaRu3Si2," Ms. Rashid has gained recognition within the academic community. Her research not only influences her peers but also provides valuable insights for future advancements in the study of quantum materials.

🏆Academic Cites

Ms. Rashid’s research in the realm of quantum materials has been published in high-impact journals, contributing significantly to the academic discourse on quasicrystals and superconductivity. Her works, such as “Coexistence of superconductivity and ferromagnetism in SmC10 at low temperatures,” and “Synthesis and characterization of iQC Al13Cr2 phase single crystal,” are cited by researchers interested in the magnetic and transport properties of quantum materials. These citations reflect the widespread recognition of her expertise and the value of her contributions to the field.

🌟 Legacy and Future Contributions

Looking ahead, Ms. Samreen Rashid aims to continue her pioneering work in quantum materials, focusing on the synthesis of new materials and the exploration of their properties. Her future research will likely expand on her current work, particularly in the areas of superconductivity, magnetism, and quantum criticality. Through her continued dedication to advancing knowledge in quantum materials, Ms. Rashid is poised to make a lasting impact in the field of physics and materials science. Her work will undoubtedly influence the development of new quantum materials and technologies that could revolutionize various applications.

📝Quantum Materials

Ms. Samreen Rashid's expertise in quantum materials is demonstrated through her significant contributions to the study of quasicrystals and superconductivity. Her research into the growth and characterization of single crystals, such as Al13Cr2, enhances our understanding of quantum materials. With an impressive academic background and ongoing research, Ms. Rashid’s contributions to quantum materials will continue to shape the future of this evolving field.

Notable Publication

📝Coexistence of superconductivity and ferromagnetism in SmC10 at low temperatures

Authors: Rashid, S., Zafar, M.S., Emmanual, O.O., Dastgeer, G.

Journal: Journal of Alloys and Compounds

Year: 2025

Citations: 0

📝Synthesis and characterization of iQC Al13Cr2 phase single crystal

Authors: Rashid, S., Shin, S., Jang, H., Mun, E., Park, T.

Journal: Materials Letters

Year: 2022

Citations: 0

📝Enhanced AC conductivity and dielectric properties of ultrathin β-silver vanadium oxide/aniline nanowires

Authors: Rashid, S., ul Ain Javed, Q., Rashid, M.H., Kang, D.J., Bhutta, M.K.

Journal: Materials Letters

Year: 2021

Citations: 2

Kuppusamy Balasubramani | Quantum Materials | Best Researcher Award 

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Dr. Kuppusamy Balasubramani | Quantum Materials | Best Researcher Award 

Hindusthan College of Engineering and Technology | India

AUTHOR PROFILE

EARLY ACADEMIC PURSUITS

Dr. K. Balasubramani embarked on his academic journey with a strong foundation in Chemical Engineering. Graduating with distinction from Anna University in 2010 with a B.Tech., he displayed early excellence in his field.

PROFESSIONAL ENDEAVORS

Transitioning seamlessly from academia to professional practice, Dr. Balasubramani began his career as a Lecturer at DPC Polytechnic College, Salem, in 2010. He honed his teaching skills while imparting knowledge to budding engineers. Subsequently, he elevated his career by serving as an Assistant Professor at JCT College of Engineering and Technology, Coimbatore, from 2014 to 2022.

CONTRIBUTIONS AND RESEARCH FOCUS

Dr. Balasubramani's contributions to the field of Chemical Engineering are substantial and varied. His research focuses on innovative solutions to environmental challenges, with a particular emphasis on adsorption studies, process optimization, and sustainable remediation techniques. His work spans diverse areas, from the removal of pharmaceuticals and dyes to the extraction of valuable resources from waste biomass.

IMPACT AND INFLUENCE

Dr. Balasubramani's research has made a significant impact on both academia and industry. His findings have been published in reputable journals, showcasing his expertise and contributing to the advancement of knowledge in his field. Furthermore, his patents demonstrate a practical application of his research, potentially benefiting society through the development of novel technologies for environmental remediation and resource utilization.

ACADEMIC CITATIONS

Dr. Balasubramani's work has garnered attention from fellow researchers, as evidenced by the numerous citations his publications have received. His contributions to the understanding of adsorption processes and sustainable technologies have been acknowledged by peers in the scientific community, highlighting the significance of his research.

LEGACY AND FUTURE CONTRIBUTIONS

Dr. Balasubramani's legacy lies in his dedication to advancing the field of Chemical Engineering through rigorous research, effective teaching, and practical innovation. His future contributions are anticipated to further push the boundaries of knowledge, addressing emerging challenges in environmental sustainability and resource management.

QUANTUM MATERIALS

In Dr. Balasubramani's body of work, the utilization of quantum materials emerges as a recurring theme. His research explores the application of graphene oxide and other nanocomposites in environmental remediation, demonstrating the potential of these advanced materials to address complex pollution problems. By harnessing the unique properties of quantum materials, Dr. Balasubramani aims to develop efficient and sustainable solutions for a cleaner and healthier environment.

NOTABLE PUBLICATION