Dr. Charles bolzan | Porous materials | Best Researcher Award
Universidade Federal do Rio Grande do Sul | Brazil
Author Profile
Early Academic Pursuits
Charles Airton Bolzan embarked on his academic journey with a Bachelor's degree in Engineering Physics from the Universidade Federal do Rio Grande do Sul (UFRGS) in 2016. Subsequently, he pursued further education, completing his Master's and Ph.D. degrees in Physics at UFRGS. His research during his undergraduate studies focused on the characterization of dielectrics deposited by atomic layer deposition using MOS structure, under the guidance of Henri Ivanov Boudinov.
Professional Endeavors
Throughout his academic career, Charles has been actively involved in research, with a primary focus on the study of semiconductor materials and thin films. He has gained expertise in techniques such as PIXE (Particle Induced X-ray Emission), RBS (Rutherford Backscattering Spectrometry), and GIXRD (Grazing Incidence X-ray Diffraction). His professional experience includes positions as a teaching assistant, research assistant, and reviewer for scientific journals.
Contributions and Research Focus
Charles Airton Bolzan's research revolves around the study of porous materials, specifically focusing on semiconductor films such as InxGa1-xSb and In0.5-xAlxSb0.5. His doctoral research involved the characterization of the composition, structure, and thermoelectric properties of InxGa1-xSb films deposited by magnetron sputtering and modified by ion irradiation. Additionally, his master's research investigated the electronic and structural properties of In0.5-xAlxSb0.5 films deposited by magnetron sputtering and irradiated by ion beams.
Impact and Influence
Through his research endeavors, Charles has contributed to advancing our understanding of semiconductor materials and their applications in various fields. His work has likely been cited in academic literature, influencing further research in the characterization and utilization of porous materials for diverse applications.
Academic Cites
Given Charles's active involvement in research and publication, his work has likely been cited in academic papers and journals within the field of physics, particularly in areas related to semiconductor materials, thin films, and porous materials.
Legacy and Future Contributions
Charles Airton Bolzan's contributions to the field of physics, particularly in the study of porous materials, are likely to have a lasting impact on scientific knowledge and technological advancements. His expertise and research findings pave the way for future studies exploring the potential applications of porous semiconductor materials in areas such as thermoelectric devices, sensors, and energy conversion systems.
Notable Publication
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Atomic-scale structure of In1-xGaxSb thin films as-deposited and after ion irradiation
Year: 2024 Month: August -
Thermal stability of In 1-x Ga x Sb nanofoams
Year: 2024 Month: January -
In1-xGaxSb nanofoams made by ion irradiation of sputtered films: Atomic composition and structure
Year: 2022 Month: July -
Local structure of porous InSb films: From first to third-shell EXAFS investigation
Year: 2021 Month: July -
Local and extended atomic structure of strained polycrystalline In (1-x) Al (x) Sb alloys
Year: 2020 Month: November